Characterization of neutron irradiated, low-resistivity silicon detectors

Abstract A complete electrical characterization of silicon detectors fabricated using low- ( ≃1.5 kΩ cm ) and high- ( >5 kΩ cm ) resistivity substrates has been carried out. Measurements have been performed before and after neutron irradiation at several different fluences, up to 3×10 14 n cm −2 (1 MeV eq .). Experimental results have been compared with CAD-based simulations. A good agreement has been found, thus validating the CAD model predictions. The adoption of low-resistivity devices appears to have some definite advantages in terms of depletion voltage, which in turn results in better interstrip capacitance and interstrip resistance.