40 G III-V photodetectors on a monolithic InP/SOI platform

We report in-plane III-V p-i-n photodetectors selectively grown on (001) silicon-on- insulator (SOI) wafers. These devices feature a responsivity of around 0.7 A/W at 1550 nm and 1.8 A/W at 1310 nm, a low dark current of 6 nA at -1 V bias, and high-speed operation beyond 40 Gb/s.