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Wenzhong Bao

Fudan University
University of California, Riverside
University of Maryland, College Park

234

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25487

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Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

2022 Journal of Materials Science & Technology
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Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application

2021 Nano Energy
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Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization

2021 EDTM | IEEE Electron Devices Technology and Manufacturing Conference
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Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

2021
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Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

2021 EDTM | IEEE Electron Devices Technology and Manufacturing Conference
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Reversing the Polarity of MoS2 with PTFE.

2021 ACS Applied Materials & Interfaces
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Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

2021 National Science Review
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Abnormal device performance in transferred multilayer MoS 2 field-effect transistors

2021 CAS | International Semiconductor Conference
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Frontiers in Electronic and Optoelectronic Devices Based on 2D Materials

2021 Advanced electronic materials
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Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications

2021 Materials horizons
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