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W. Y. Hsieh
W. Y. Hsieh
United Microelectronics Corporation
Dielectric
Electronic engineering
Materials science
Analytical chemistry
Leakage (electronics)
3
Papers
6
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0
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Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment
2002
IRPS | International Reliability Physics Symposium
Chuan-Hsi Liu
Hsiu Shan Lin
Yu-Yin Lin
M. G. Chen
Tung-Ming Pan
C. J. Kao
K. T. Huang
S.H. Lin
Y. C. Sheng
Wen-Tung Chang
Joo-Hyung Lee
M. Huang
Chiung Sheng Hsiung
Shiang Huang-Lu
Chen-Chung Hsu
Alan Y. Liang
Jenkon Chen
W. Y. Hsieh
P. W. Yen
S. C. Chien
Y. T. Loh
Yih J. Chang
Fu Tai Liou
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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer
1999
Applied Surface Science
Y. C. Peng
L. J. Chen
W. Y. Hsieh
Y.R Yang
Yong Fen Hsieh
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Integration of low-k organic flowable SOG in a non-etchback/CMP process
1997
George Chou
Amanda Shiaw-Rong Chen
W. Y. Hsieh
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