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Mengyao Xie
Mengyao Xie
Royal Institute of Technology
Epitaxy
Photoluminescence
Silicon
Nano-
lateral overgrowth
3
Papers
43
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Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
2008
Journal of Applied Physics
Fredrik Olsson
Mengyao Xie
Sebastian Lourdudoss
Iván Prieto
P. A. Postigo
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Time resolved photoluminescence and transmission electron microscopy studies on nano InP grown on silicon by nano epitaxial lateral overgrowth
2008
Fredrik Olsson
Mengyao Xie
Saulius Marcinkevicius
F. Gerard
A. R. Alija
Iván Prieto
P. A. Postigo
Sebastian Lourdudoss
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Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings
2007
IPRM | International Conference on Indium Phosphide and Related Materials
Fredrik Olsson
Mengyao Xie
F. Gerard
A. R. Alija
Iván Prieto
P. A. Postigo
Sebastian Lourdudoss
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Citations (3)
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