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F. Gemain
F. Gemain
Commissariat à l'énergie atomique et aux énergies alternatives
Photoluminescence
Analytical chemistry
Epitaxy
Doping
Hall effect
6
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71
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Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates
2014
Journal of Applied Physics
Stéphane Brochen
Matthieu Lafossas
Ivan-Christophe Robin
Pierre Ferret
F. Gemain
Julien Pernot
G. Feuillet
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Citations (16)
Composition dependence of the mercury vacancies energy levels in HgCdTe: Evolution of the “negative-U” property
2013
Journal of Applied Physics
F. Gemain
Ivan-Christophe Robin
G. Feuillet
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Citations (8)
Arsenic complexes optical signatures in As-doped HgCdTe
2013
Applied Physics Letters
F. Gemain
Ivan-Christophe Robin
Stéphane Brochen
P. Ballet
O. Gravrand
G. Feuillet
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Citations (9)
Photoluminescence studies of CdS layers for solar cells
2012
Physica Status Solidi (c)
F. Gemain
Ivan-Christophe Robin
Sébastien Renet
Sergio Bernardi
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Citations (22)
Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe
2012
Journal of Electronic Materials
F. Gemain
Ivan-Christophe Robin
S. Brochen
M. De Vita
O. Gravrand
A. Lusson
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Citations (7)
Identification of the double acceptor levels of the mercury vacancies in HgCdTe
2011
Applied Physics Letters
F. Gemain
Ivan-Christophe Robin
M. De Vita
S. Brochen
A. Lusson
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Citations (9)
1