Old Web
English
Sign In
Acemap
>
authorDetail
>
M. Fulde
M. Fulde
Technische Universität München
Electronic engineering
Field-effect transistor
CMOS
Quantum tunnelling
Communication channel
5
Papers
106
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Complementary multi-gate tunnelling FETs: fabrication, optimisation and application aspects
2009
INEC | IEEE International Nanoelectronics Conference
M. Fulde
A. Heigl
Gerhard Wachutka
G. Knoblinger
Doris Schmitt-Landsiedel
Show All
Source
Cite
Save
Citations (0)
Layout options for stability tuning of SRAM cells in multi-gate-FET technologies
2007
ESSCIRC | European Solid-State Circuits Conference
Florian Bauer
K. von Arnim
Christian Pacha
T. Schulz
M. Fulde
Axel Nackaerts
M. Jurczak
Weize Xiong
K.T. San
C.R. Cleavelin
Klaus Schrüfer
Georg Georgakos
Doris Schmitt-Landsiedel
Show All
Source
Cite
Save
Citations (14)
Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects
2007
Advances in Radio Science
M. Fulde
J. P. Engelstädter
Gerhard Knoblinger
Doris Schmitt-Landsiedel
Show All
Source
Cite
Save
Citations (14)
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
2006
Solid-state Electronics
Th. Nirschl
St. Henzler
J. Fischer
M. Fulde
A. Bargagli-Stoffi
M. Sterkel
Josef Sedlmeir
C. Weber
R. Heinrich
Ulrich Schaper
Jan Einfeld
R. Neubert
U Feldmann
Knut Stahrenberg
E. Ruderer
Georg Georgakos
A. Huber
Ronald Kakoschke
W. Hansch
Doris Schmitt-Landsiedel
Show All
Source
Cite
Save
Citations (73)
Impact of mask alignment on the tunneling field effect transistor (TFET)
2005
ICMTS | International Conference on Microelectronic Test Structures
Thomas Nirschl
U. Schaper
J. Einfeld
Stephan Henzler
M. Sterkel
J. Singer
M. Fulde
W. Hansch
Georg Georgakos
D. Schmitt-Landsiedell
Show All
Source
Cite
Save
Citations (5)
1