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Yasuhiko Onishi
Yasuhiko Onishi
National Institute of Advanced Industrial Science and Technology
Voltage
Electronic engineering
Optoelectronics
Composite material
Materials science
5
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49
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Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness
2016
Materials Science Forum
Hiromu Shiomi
Takashi Tsuji
Naoyuki Ohse
Yasuhiko Onishi
Kenji Fukuda
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1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage
2016
Materials Science Forum
Shinsuke Harada
Yusuke Kobayashi
Akimasa Kinoshita
Naoyuki Ohse
Takahito Kojima
Motoaki Iwaya
Hiromu Shiomi
Hidenori Kitai
Shinya Kyogoku
Keiko Ariyoshi
Yasuhiko Onishi
Hiroshi Kimura
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Citations (24)
3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability
2016
Materials Science Forum
Takashi Tsuji
Hiromu Shiomi
Naoyuki Ohse
Yasuhiko Onishi
Kenji Fukuda
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Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC face
2016
Japanese Journal of Applied Physics
Naoki Kumagai
Hiroshi Kimura
Yasuhiko Onishi
Mitsuo Okamoto
Kenji Fukuda
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Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation
2014
Materials Science Forum
Mitsuo Okamoto
Youichi Makifuchi
Tsuyoshi Araoka
Masaki Miyazato
Yoshiyuki Sugahara
Takashi Tsutsumi
Yasuhiko Onishi
Hiroshi Kimura
Shinsuke Harada
Kenji Fukuda
Akihiro Otsuki
Hajime Okumura
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Citations (15)
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