3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability

In this paper, newly developed 3300V-class IEMOSFETs were presented. By means of the optimization of current spreading layers (CSLs), we could achieve low specific on-resistance (RONA) of 11.6mΩcm2, while maintaining high blocking voltage (BVDSS) of 3978V. The RONA analysis revealed drastic reduction of JFET resistance compared to a MOSFET without a CSL. High ruggedness with the avalanche withstanding energy of 4.6J/cm2 was achieved by the optimal device design of the edge termination. We could also confirm favorable characteristics of RONA, BVDSS and threshold voltage (VTH) at high temperatures up to 200○C, and the fast switching behavior.