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Claude Ortolland
Claude Ortolland
IBM
Electronic engineering
Silicon-germanium
Metal gate
CMOS
Semiconductor device
3
Papers
15
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Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS
2016
IEEE Electron Device Letters
Martin M. Frank
Cyril Cabral
Jessica Dechene
Claude Ortolland
Yu Zhu
Eric D. Marshall
Conal E. Murray
Michael P. Chudzik
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Citations (4)
Layout Scaling of $\hbox{Si}_{1-x}\hbox{Ge}_{x} \hbox{-Channel}$ pFETs
2011
IEEE Transactions on Electron Devices
Geert Eneman
Shinpei Yamaguchi
Claude Ortolland
Shinji Takeoka
Masaharu Kobayashi
Liesbeth Witters
Andriy Hikavyy
Jerome Mitard
Roger Loo
Thomas Hoffmann
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Citations (11)
Overview of anneal technology for advanced logic CMOS
2011
IWJT | International Workshop on Junction Technology
Claude Ortolland
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