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K. Muthuseenu
K. Muthuseenu
Arizona State University
Optoelectronics
Materials science
Electronic engineering
Field-effect transistor
Radiation hardening
5
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5
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Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs
2021
IEEE Transactions on Nuclear Science
K. Muthuseenu
Hugh J. Barnaby
K.F. Galloway
Aleksandr E. Koziukov
T A Maksimenko
M. Y. Vyrostkov
K. B. Bu-Khasan
A A Kalashnikova
A. Privat
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Radiation Hardened Millimeter-Wave Receiver Implemented in 90nm, SiGe HBT Technology
2021
IEEE Transactions on Nuclear Science
Ebrahim M. Al Seragi
Subhra Dash
K. Muthuseenu
John D. Cressler
Hugh J. Barnaby
Ani Khachatrian
Stephen P. Buchner
Dale McMorrow
Saeed Zeinolabedinzadeh
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Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs
2021
IEEE Transactions on Electron Devices
K. Muthuseenu
Hugh J. Barnaby
Kenneth F. Galloway
A. E. Koziukov
T A Maksimenko
M. Y. Vyrostkov
K. B. Bu-Khasan
A A Kalashnikova
A. Privat
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Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation
2020
Microelectronics Reliability
A. Privat
Hugh J. Barnaby
B. S. Tolleson
K. Muthuseenu
P.C. Adell
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Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs
2020
Microelectronics Reliability
K. Muthuseenu
Hugh J. Barnaby
A. Patadia
Keith E. Holbert
A. Privat
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Citations (4)
1