Old Web
English
Sign In
Acemap
>
authorDetail
>
B. S. Tolleson
B. S. Tolleson
Arizona State University
Bipolar junction transistor
Physics
Transistor
Absorbed dose
Optoelectronics
3
Papers
14
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation
2020
Microelectronics Reliability
A. Privat
Hugh J. Barnaby
B. S. Tolleson
K. Muthuseenu
P.C. Adell
Show All
Source
Cite
Save
Citations (1)
Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies
2019
IEEE Transactions on Nuclear Science
Aymeric Privat
Hugh J. Barnaby
Philippe C. Adell
B. S. Tolleson
Y. Wang
X. Han
P. Davis
B. R. Rax
T.E. Buchheit
Show All
Source
Cite
Save
Citations (5)
Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors
2018
IEEE Transactions on Nuclear Science
B. S. Tolleson
Philippe C. Adell
B.G. Rax
Hugh J. Barnaby
Aymeric Privat
X. Han
A. Mahmud
I. Livingston
Show All
Source
Cite
Save
Citations (8)
1