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C. Parthasarthy
C. Parthasarthy
STMicroelectronics
Electronic engineering
Dielectric
High-κ dielectric
Leakage (electronics)
Gate oxide
4
Papers
33
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Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies
2006
IEEE Transactions on Device and Materials Reliability
G. Ribes
S. Bruyere
D. Roy
C. Parthasarthy
M. Muller
M. Denais
V. Huard
T. Skotnicki
G. Ghibaudo
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Citations (12)
Physical origin of Vt instabilities in high-k dielectrics and process optimisation
2005
IIRW | International Integrated Reliability Workshop
G. Ribes
S. Bruyere
D. Roy
C. Parthasarthy
M. Müller
M. Denais
V. Huard
T. Skotnicki
G. Ghibaudo
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Citations (4)
Insight on physics of Hf-based dielectrics reliability
2005
ESSDERC | European Solid-State Device Research Conference
G. Ribes
M. Denais
S. Bruyere
D. Roy
F. Monsieur
V. Huard
C. Parthasarthy
M. Muller
T. Skotnicki
G. Ghibaudo
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Citations (1)
Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform
2003
IEDM | International Electron Devices Meeting
B. Tavel
M. Bidaud
N. Emonet
D. Barge
N. Planes
H. Brut
D. Roy
J. C. Vildeuil
R. Difrenza
K. Rochereau
M. Denais
V. Huard
P. Llinares
S. Bruyere
C. Parthasarthy
N. Revil
R. Pantel
F. Guyader
L. Vishnubotla
K. Barla
F. Arnaud
P. Stolk
M. Woo
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Citations (16)
1