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Min Kyu Yang
Min Kyu Yang
Samsung
Electronic engineering
Resistive random-access memory
Physics
Optoelectronics
Analytical chemistry
5
Papers
243
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Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application
2017
IEEE Electron Device Letters
Yunmo Koo
Sangmin Lee
Seong-Geon Park
Min Kyu Yang
Hyunsang Hwang
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Citations (31)
An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film
2015
Applied Physics Letters
Min Kyu Yang
Gun Hwan Kim
Hyunsu Ju
Jeon-Kook Lee
Han-Cheol Ryu
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Citations (24)
Highly reliable ReRAM technology with encapsulation process for 20nm and beyond
2013
IMW | International Memory Workshop
Dong-Jun Seong
Min Kyu Yang
Hyunsu Ju
Jung Moo Lee
Eunmi Kim
Seung-jae Jung
Jinwoo Lee
Gun Hwan Kim
Seol Choi
Lijie Zhang
Seong-Geon Park
Youn-Seon Kang
In Gyu Baek
Jung Dal Choi
Ho Kyu Kang
Eunseung Jung
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Citations (3)
A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)
2012
IEDM | International Electron Devices Meeting
Seong-Geon Park
Min Kyu Yang
Hyunsu Ju
Dong-Jun Seong
Jung Moo Lee
Eunmi Kim
Seung-jae Jung
Lijie Zhang
Yoo Cheol Shin
In Gyu Baek
Jung Dal Choi
Ho Kyu Kang
Chilhee Chung
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Citations (74)
Realization of vertical resistive memory (VRRAM) using cost effective 3D process
2011
IEDM | International Electron Devices Meeting
In Gyu Baek
C.J. Park
Hyunsu Ju
Dong-Jun Seong
H. S. Ahn
Jung-hyeon Kim
Min Kyu Yang
S. H. Song
E. M. Kim
Soo-Yeong Park
Chang-hyun Park
Chulgi Song
Gi-Tae Jeong
S. Choi
Hyon-Goo Kang
Chilhee Chung
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Citations (111)
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