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S. H. Song
S. H. Song
Samsung
Electronic engineering
Physics
Electrical engineering
Engineering
Dram
4
Papers
124
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A novel write method for improving RESET distribution of PRAM
2017
VLSIT | Symposium on VLSI Technology
Heungsik Park
Kwangseok Lee
S. H. Song
K. G. Lee
Jai Kwang Shin
V. Gangasani
Y. S. Shin
Dae-Woong Kang
J. H. Park
Ki-whan Song
Gwan-Hyeob Koh
Gi-Tae Jeong
Ki-Kwan Park
K. H. Kyung
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Citations (4)
Realization of vertical resistive memory (VRRAM) using cost effective 3D process
2011
IEDM | International Electron Devices Meeting
In Gyu Baek
C.J. Park
Hyunsu Ju
Dong-Jun Seong
H. S. Ahn
Jung-hyeon Kim
Min Kyu Yang
S. H. Song
E. M. Kim
Soo-Yeong Park
Chang-hyun Park
Chulgi Song
Gi-Tae Jeong
S. Choi
Hyon-Goo Kang
Chilhee Chung
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Citations (111)
Highly manufacturable and high performance SDR/DDR 4 Gb DRAM
2001
VLSIT | Symposium on VLSI Technology
Kyeong-tae Kim
H.S. Jeong
Wouns Yang
Yoo-Sang Hwang
C.H. Cho
M.M. Jeong
Sung-il Park
Su Jin Ahn
Yoon-Soo Chun
Soo-Ho Shin
Jong-woo Park
S. H. Song
J.Y. Lee
Sungho Jang
Chang-Hyun Lee
Jae-Hun Jeong
K.H. Cho
H.I. Yoon
J.S. Jeon
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Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology
2000
IEDM | International Electron Devices Meeting
H.S. Jeong
Wouns Yang
Yoo-Sang Hwang
C.H. Cho
S. Park
Su Jin Ahn
Yoon-Soo Chun
Soo-Ho Shin
S. H. Song
J.Y. Lee
S. M. Jang
Chang-Hyun Lee
Jae-Hun Jeong
Mann-Ho Cho
J.K. Lee
Kyungryun Kim
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Citations (5)
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