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Heungsik Park
Heungsik Park
Samsung
Electronic engineering
Electrical engineering
Engineering
Fin
Leakage (electronics)
4
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4
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A novel write method for improving RESET distribution of PRAM
2017
VLSIT | Symposium on VLSI Technology
Heungsik Park
Kwangseok Lee
S. H. Song
K. G. Lee
Jai Kwang Shin
V. Gangasani
Y. S. Shin
Dae-Woong Kang
J. H. Park
Ki-whan Song
Gwan-Hyeob Koh
Gi-Tae Jeong
Ki-Kwan Park
K. H. Kyung
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Citations (4)
Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor
2008
Japanese Journal of Applied Physics
Makoto Yoshida
Chul Lee
Kyoung-Ho Jung
Chang-Kyu Kim
Hui-jung Kim
Heungsik Park
Won-sok Lee
Keunnam Kim
Jae-Rok Kahng
Wouns Yang
Donggun Park
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Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
2007
The Japan Society of Applied Physics
Chul Lee
Makoto Yoshida
Kyoung-Ho Jung
Chang Kyu Kim
Hui-jung Kim
Heungsik Park
Won-sok Lee
Keunnam Kim
Jae-Rok Kahng
Wouns Yang
Donggun Park
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The Vth controllability of 5nm body-tied CMOS FinFET
2005
VLSIT | Symposium on VLSI Technology
Hye-Jin Cho
Jeong Dong Choe
Jeong-Nam Han
Dong-chan Kim
Heungsik Park
Doo-Hoon Goo
Ming Li
Chang Woo Oh
Dong-Won Kim
Tae-Yong Kim
Choong-ho Lee
Donggun Park
Kinam Kim
Byung-Il Ryu
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