A novel write method for improving RESET distribution of PRAM

RESET distribution of phase-change random access memory (PRAM) is highly related to heat fluctuations during RESET write (RESET W ). In this work we investigate the effect of load resistance (R L ) with constant voltage write method and propose new RESET W method with an optimal R L selection equation with considering Joule heating and thermoelectric effects. Since the optimal R L compensates for intrinsic dynamic resistance variation in PRAM, the heat fluctuation is reduced and the RESET distribution is improved. With fabricated PRAM TEG, we verify that optimal RL exists and achieve more improved RESET distribution with the optimized R L by 41% than with R L not optimized.