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Yen-Ting Hsieh

National Chiao Tung University

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Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 Layers

2009 IEEE Transactions on Nanotechnology
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Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of $\hbox{Si}_{{\bf 1.33}} \hbox{Ge}_{{\bf 0.67}} \hbox{O}_{\bf 2}$ and $\hbox{Si}_{{\bf 2.67}} \hbox{Ge}_{{\bf 1.33}} \hbox{N}_{\bf 2}$ Layers

2009 IEEE Transactions on Nanotechnology
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Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of and Layers

2009 IEEE Transactions on Nanotechnology
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Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application

2007 Surface & Coatings Technology
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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

2007 Applied Physics Letters
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Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application

2007 Applied Physics Letters
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Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate

2007 Applied Physics Letters
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