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Yoon-hae Kim
Yoon-hae Kim
Samsung
Electronic engineering
Physics
Transistor
Static random-access memory
Crystallography
5
Papers
10
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Semiconductor devices having multi-gate structures and methods of making such devices
2016
Yoon-hae Kim
Jin-Wook Lee
Jong Ki Jung
Myung Il Kang
Kwang Yong Yang
Kwan-Heum Lee
Byeong-Chan Lee
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Process integration of highly stable 1.25μm2 6T-SRAM cell with 45nm gate length triple gate transistors
2004
Kwon Lee
Jeong Hwan Yang
Shigenobu Maeda
You Seung Jin
Jung-A Choi
Su-Gon Bae
Yoon-hae Kim
Jeong-Hoon Ahn
Min-Chul Sun
Ja-Hum Ku
Hwa-Sung Rhee
Young-Sub You
Jin Young Kim
Byeong-Yun Name
Chang-Jin Kang
Ho-Kyu Kang
Kwang Pyuk Suh
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金属−絶縁物−金属キャパシタおよび配線構造
2004
Yoon-hae Kim
Seong-ho Liu
Kyotai Ri
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Double raised source/drain transistor with 50 nm gate length on 17 nm UTF-SOI for 1.1 /spl mu/m/sup 2/ embedded SRAM technology
2003
IEDM | International Electron Devices Meeting
Chang-bong Oh
Myoung-hwan Oh
Hee Sung Kang
Chang-hyun Park
Byung-Jun Oh
Yoon-hae Kim
Hwa-Sung Rhee
Young-Wug Kim
Kwang Pyuk Suh
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Integration of MIM capacitors with low-k/Cu process for 90 nm analog circuit applications
2003
IITC | International Interconnect Technology Conference
Jeong-Hoon Ahm
Kyung-Tae Lee
Mu-Kyeung Jung
Yong Jun Lee
Byung-Jun Oh
Seong-ho Liu
Yoon-hae Kim
Young-Wug Kim
Kwang Pyuk Suh
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Citations (6)
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