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Gijs Brouwers
Gijs Brouwers
Katholieke Universiteit Leuven
Annealing (metallurgy)
Chemistry
Germanium
Silicon
Analytical chemistry
3
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30
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Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
2009
Physica Status Solidi (c)
Eddy Simoen
Gijs Brouwers
Rui Yang
Geert Eneman
Mireia Bargallo Gonzalez
Frederick Leys
Brice De Jaeger
Jerome Mitard
D.P. Brunco
Laurent Souriau
Nyles Cody
S.G. Thomas
Luc Lajaunie
Marie-Laure David
Marc Meuris
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Citations (19)
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
2008
Materials Science in Semiconductor Processing
Eddy Simoen
Gijs Brouwers
Geert Eneman
M. Bargallo Gonzalez
B. De Jaeger
Jerome Mitard
D.P. Brunco
Laurent Souriau
Nyles Cody
S.G. Thomas
Marc Meuris
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Citations (5)
Shallow boron implantations in Ge and the role of the pre-amorphization depth
2008
Materials Science in Semiconductor Processing
Eddy Simoen
Gijs Brouwers
Alessandra Satta
Marie-Laure David
F. Pailloux
Brigitte Parmentier
Trudo Clarysse
Jozefien Goossens
Wilfried Vandervorst
Marc Meuris
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Citations (6)
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