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Satoshi Kure Hosokawa
Satoshi Kure Hosokawa
Engineering
Electronic engineering
MOSFET
Electrical engineering
Optoelectronics
3
Papers
19
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1/ f -Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
2005
IEICE Transactions on Electronics
S. Matsumoto
Hiroaki Ueno
Satoshi Kure Hosokawa
Toshihiko Kitamura
Mitiko Miura-Mattausch
Hans Jürgen Mattausch
Tatsuya Ohguro
Shigetaka Kumashiro
T. Yamaguchi
Kyoji Yamashita
Noriaki Nakayama
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Simulation model for a design of a semiconductor device, methods of analysis for thermal drain noise simulation method and simulation apparatus
2004
Satoshi Kure Hosokawa
Mitiko Higashihiroshima Miura
Hiroaki Ueno
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Semiconductor device simulation method and semiconductor device simulation apparatus
2004
Satoshi Kure Hosokawa
Mitiko Higashihiroshima Miura
Hiroaki Ueno
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