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Georgios P. Gakis
Georgios P. Gakis
National Technical University of Athens
Atomic layer deposition
Chemical engineering
Deposition (law)
Silicon
Island growth
3
Papers
29
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Detailed investigation of the surface mechanisms and their interplay with transport phenomena in alumina atomic layer deposition from TMA and water
2019
Chemical Engineering Science
Georgios P. Gakis
Hugues Vergnes
E. Scheid
Constantin Vahlas
Andreas G. Boudouvis
Brigitte Caussat
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Citations (15)
Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si
2019
Applied Surface Science
Georgios P. Gakis
Constantin Vahlas
Hugues Vergnes
Sandrine Dourdain
Yann Tison
Hervé Martinez
Jérome Bour
David S. Ruch
Andreas G. Boudouvis
Brigitte Caussat
Emmanuel Scheid
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Citations (13)
Ιn situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD
2019
Journal of Applied Physics
Georgios P. Gakis
Hugues Vergnes
Fuccio Cristiano
Yann Tison
Constantin Vahlas
Brigitte Caussat
Andreas G. Boudouvis
Emmanuel Scheid
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