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S.M. Noh
S.M. Noh
GlobalFoundries
Dielectric strength
Analytical chemistry
Time-dependent gate oxide breakdown
Voltage
Phenomenon
2
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3
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Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
2018
IRPS | International Reliability Physics Symposium
J.H. Lim
Nagarajan Raghavan
S. Mei
V.B. Naik
J.H. Kwon
S.M. Noh
B. Liu
E. H. Toh
N. L. Chung
R. Chao
Kangho Lee
Kin Leong Pey
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Citations (1)
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
2017
Microelectronic Engineering
J.H. Lim
Nagarajan Raghavan
S. Mei
K.H. Lee
S.M. Noh
J.H. Kwon
E. Quek
Kin Leong Pey
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Citations (2)
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