Old Web
English
Sign In
Acemap
>
authorDetail
>
J.H. Lim
J.H. Lim
Singapore University of Technology and Design
Dielectric strength
Time-dependent gate oxide breakdown
Condensed matter physics
Analytical chemistry
Voltage
5
Papers
14
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions.
2019
IRPS | International Reliability Physics Symposium
J.H. Lim
Nagarajan Raghavan
Vinayak Bharat Naik
J.H. Kwon
K. Yamane
H. Yang
K.H. Lee
Kin Leong Pey
Show All
Source
Cite
Save
Citations (2)
Superior Endurance Performance of 22-nm Embedded MRAM Technology.
2019
IRPS | International Reliability Physics Symposium
Vinayak Bharat Naik
J.H. Lim
K. Yamane
D. Zeng
H. Yang
Naganivetha Thiyagarajah
J.H. Kwon
N. L. Chung
R. Chao
T. Ling
K.H. Lee
Show All
Source
Cite
Save
Citations (4)
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
2018
IRPS | International Reliability Physics Symposium
J.H. Lim
Nagarajan Raghavan
S. Mei
V.B. Naik
J.H. Kwon
S.M. Noh
B. Liu
E. H. Toh
N. L. Chung
R. Chao
Kangho Lee
Kin Leong Pey
Show All
Source
Cite
Save
Citations (1)
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions
2018
IEDM | International Electron Devices Meeting
J.H. Lim
Nagarajan Raghavan
Andrea Padovani
J.H. Kwon
K. Yamane
H. Yang
V.B. Naik
Luca Larcher
Kangho Lee
Kin Leong Pey
Show All
Source
Cite
Save
Citations (5)
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
2017
Microelectronic Engineering
J.H. Lim
Nagarajan Raghavan
S. Mei
K.H. Lee
S.M. Noh
J.H. Kwon
E. Quek
Kin Leong Pey
Show All
Source
Cite
Save
Citations (2)
1