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J. Calvo
J. Calvo
Fraunhofer Society
Analytical chemistry
Physics
Ferroelectricity
Logic gate
Optoelectronics
2
Papers
139
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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
2018
Applied Physics Letters
T. Ali
P. Polakowski
Stefan Riedel
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
K. Seidel
D. A. Löhr
R. Hoffmann
M. Czernohorsky
Kati Kühnel
Xaver Thrun
N. Hänisch
P. Steinke
J. Calvo
Johannes Müller
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Citations (57)
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
2018
IEEE Transactions on Electron Devices
T. Ali
Patrick Polakowski
Stefan Riedel
T. Büttner
Thomas Kämpfe
Matthias Rudolph
B. Pätzold
K. Seidel
D. A. Löhr
R. Hoffmann
M. Czernohorsky
Kati Kühnel
P. Steinke
J. Calvo
K. Zimmermann
Johannes Müller
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Citations (82)
1