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M. Racanelli
M. Racanelli
Motorola
Analytical chemistry
Chemistry
Chemical vapor deposition
Epitaxy
Electronic engineering
3
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31
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Contact technology for high performance scalable BiCMOS on TFSOI
1995
IEEE Electron Device Letters
M. Racanelli
W.M. Huang
S.C. Kuehne
J. Foerstner
S. Simon Wong
B.Y. Hwang
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Uniformity of GexSi1−x epitaxial layers grown by ultrahigh vacuum chemical‐vapor deposition
1993
Applied Physics Letters
David W. Greve
G. McLaughlin
M.A. Capano
M. Racanelli
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High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor
1993
IEEE Electron Device Letters
Merit Hong
E. de Fresart
John W. Steele
A. Zlotnicka
C. Stein
Gordon Tam
M. Racanelli
L. Knoch
Yee-Chaung See
K. Evans
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Citations (26)
1