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Shadi Sabri
Shadi Sabri
Durham University
Composite material
Materials science
Power semiconductor device
Engineering physics
MOSFET
4
Papers
48
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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
2018
Materials Science Forum
Edward Van Brunt
Albert A. Burk
Daniel J. Lichtenwalner
R.T. Leonard
Shadi Sabri
Donald A. Gajewski
Andrew K. Mackenzie
Brett Hull
Scott Allen
John W. Palmour
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Citations (13)
Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET
2018
Materials Science Forum
Anup Anurag
Ghanshyamsinh Gohil
Sayan Acharya
Ki Jeong Han
Kasunaidu Vechalapu
B. Jayant Baliga
Subhashish Bhattacharya
Edward Van Brunt
Shadi Sabri
Brett Hull
Dave Grider
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Citations (3)
Short-Circuit Degradation of 10-kV 10-A SiC MOSFET
2017
IEEE Transactions on Power Electronics
Emanuel-Petre Eni
Szymon Beczkowski
Stig Munk-Nielsen
Tamas Kerekes
Remus Teodorescu
R. R. Juluri
Brian Julsgaard
Edward VanBrunt
Brett Hull
Shadi Sabri
David Grider
Christian Uhrenfeldt
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Citations (30)
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