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Shang Chun Lu

University of Illinois at Urbana–Champaign

5

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93

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AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework

2019
- Shang Chun Lu
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Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for UltraLow Power Logic Applications

2018 SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
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Modeling of black phosphorus vertical TFETs without chemical doping for drain

2017 SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
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Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

2016
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Electronic structures of defects and magnetic impurities in MoS2 monolayers.

2014 Nanoscale Research Letters
- Shang Chun Lu
- Jean-Pierre Leburton
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Citations (64)