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Cristiano Capasso
Cristiano Capasso
GlobalFoundries
Time-dependent gate oxide breakdown
Electronic engineering
Engineering
Dielectric strength
Capacitor
5
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5
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Discussion Group III at IIRW 2019
2019
IIRW | International Integrated Reliability Workshop
Clemens Ostermaier
Cristiano Capasso
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Vertical natural capacitor time dependent dielectric breakdown (TDDB) improvement in 28nm
2015
ASMC | Advanced Semiconductor Manufacturing Conference
Mary Claire Silvestre
Zhang Galor Wenyi
Km Mahalingam Anbu Selvam
Eswar Ramanathan
Christopher Ordonio
John Schaller
Lee Jong Hyup
Cristiano Capasso
Patrick Justison
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An investigation of process dependence of porous IMD TDDB
2015
IRPS | International Reliability Physics Symposium
Wenyi Zhang
Mary Claire Silvestre
A. Selvam
Eswar Ramanathan
Christopher Ordonio
John Schaller
Tian Shen
Kong Boon Yeap
Cristiano Capasso
Patrick Justison
Jian-Hsing Lee
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me Dependent Dielectric Breakdown (TDDB) Improvem
2015
Mary Claire Silvestre
Mahalingam Anbu Selvam
John Schaller
Lee Jong Hyup
Cristiano Capasso
Patrick Justison
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New insight in BEOL TDDB Cu diffusion mechanism: A constant current stress approach
2014
IRPS | International Reliability Physics Symposium
Tian Shen
Hao Jiang
Wenyi Zhang
Tommy Cahyadi
Eng Chye Chua
Cristiano Capasso
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Citations (4)
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