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Vladimir Polyakov
Vladimir Polyakov
Fraunhofer Society
Optoelectronics
Heterojunction
High-electron-mobility transistor
Sapphire
Chemical vapor deposition
3
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10
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0
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Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
2020
IRPS | International Reliability Physics Symposium
Tobias Kemmer
Michael Dammann
M. Baeumler
Vladimir Polyakov
Peter Brückner
H. Konstanzer
Rudiger Quay
Oliver Ambacher
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Epitaxial Growth of GaN/Ga2O3 and Ga2O3/GaN Heterostructures for Novel High Electron Mobility Transistors
2020
Journal of Crystal Growth
Stefano Leone
Roberto Fornari
Matteo Bosi
Vincenzo Montedoro
Lutz Kirste
Philipp Doering
F. Benkhelifa
Mario Prescher
Christian Manz
Vladimir Polyakov
Oliver Ambacher
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RFストレス試験とDCストレス試験中のAlGaN/GaN HEMTにおけるトラップの生成
2012
IRPS | International Reliability Physics Symposium
M. Caesar
Michael Dammann
Vladimir Polyakov
Patrick Waltereit
Wolfgang Bronner
M. Baeumler
Rudiger Quay
Michael Mikulla
Oliver Ambacher
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