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In Sang Jeon
In Sang Jeon
Samsung
Dielectric
Capacitor
Leakage (electronics)
Time-dependent gate oxide breakdown
Tin
4
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12
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Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric
2007
VLSIT | Symposium on VLSI Technology
Sang-Jin Hyun
Hye-min Kim
Hye Lan Lee
Kab-jin Nam
Sug-hun Hong
Dong-chan Kim
Jihyun Kim
Soo-Ik Jang
In Sang Jeon
Sang Bom Kang
Si-Young Choi
U In Chung
Joo-Tae Moon
Byung-Il Ryu
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Citations (1)
Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics
2007
IRPS | International Reliability Physics Symposium
Kab-jin Nam
S.H. Lee
Dong-chan Kim
Seok-Hun Hyun
Jin-Yang Kim
In Sang Jeon
Sang Bom Kang
Sung Woon Choi
U-I. Chung
June Moon
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Citations (2)
Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13 $\mu$m Technology and Beyond
2001
Japanese Journal of Applied Physics
Hyun Seok Lim
Sang Bom Kang
In Sang Jeon
Gil-heyun Choi
Young Wook Park
Sang In Lee
Joo-Tae Moon
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Citations (9)
Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta2O5 and Al2O3 MIS Capacitor for 0.13 μm Technology and Beyond
2000
The Japan Society of Applied Physics
Hyun Seok Lim
Sang Bom Kang
In Sang Jeon
Gil-heyun Choi
Young Wook Park
Sang In Lee
Joo-Tae Moon
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