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Jin-Yang Kim
Jin-Yang Kim
Samsung
Electronic engineering
Dram
Engineering
MOSFET
Gate oxide
5
Papers
12
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Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics
2007
IRPS | International Reliability Physics Symposium
Kab-jin Nam
S.H. Lee
Dong-chan Kim
Seok-Hun Hyun
Jin-Yang Kim
In Sang Jeon
Sang Bom Kang
Sung Woon Choi
U-I. Chung
June Moon
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Charge trapping induced DRAM data retention time degradation under wafer-level burn-in stress
2002
IRPS | International Reliability Physics Symposium
Hyeong Won Seo
Gyo-Young Jin
Kihoon Yang
Yun-Jae Lee
Joo-hyun Lee
Du Heon Song
Yong-Chol Oh
Jun-Yong Noh
Seung Wan Hong
Dong-Hyun Kim
Jin-Yang Kim
Hyeong-Hoon Kim
Dae-Joong Won
Won-Seong Lee
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Citations (10)
Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
2001
SDM | SIAM International Conference on Data Mining
Jin-Yang Kim
Yong-chul Oh
Donghyun Kim
Kyu-Taek Hyun
Hyoung-Woen Seo
Dae-Joong Won
Moon-Mo Jeong
Yun-Jae Lee
Yoon-Jae Man
Sang-Hyun Lee
Ho-Won Sun
Se-Myeong Jang
Chang-Huhn Lee
Hyun Chang Kim
Chang-Kyu Kim
Makoto Yoshida
Woun-Suck Yang
In-Ho Nam
Gyo-Yong Jin
Won-Seong Lee
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Invited Effects of WSix-Polycide Gate Processes on MOSFET Reliability and Characteristics (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
2001
Jin-Yang Kim
Yong-chul Oh
Donghyun Kim
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A new analysis technique for the sensitivity of chip performance
1999
CAD | International Conference on VLSI and CAD
Sang-Hoon Lee
Dong-Yun Lee
Jin-Yang Kim
Young-Jin Gu
Young Kwan Park
Jeong-Taek Kong
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