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Jun-Yong Noh
Jun-Yong Noh
Samsung
Analytical chemistry
Electronic engineering
Leakage (electronics)
Dram
Degradation (geology)
3
Papers
17
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New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production
2018
IEEE Transactions on Electron Devices
Jong Min Lee
Pyungho Choi
Soonkon Kim
Jung-Hwan Oh
Soo-Ho Shin
Jun-Yong Noh
Hyoung-sub Kim
Byoungdeog Choi
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Citations (3)
Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO 2 –Based High-k Dielectrics
2017
IEEE Electron Device Letters
Jong Min Lee
Dong-sik Park
Seung Chul Yew
Soo-Ho Shin
Jun-Yong Noh
Hyoung-sub Kim
Byoungdeog Choi
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Citations (4)
Charge trapping induced DRAM data retention time degradation under wafer-level burn-in stress
2002
IRPS | International Reliability Physics Symposium
Hyeong Won Seo
Gyo-Young Jin
Kihoon Yang
Yun-Jae Lee
Joo-hyun Lee
Du Heon Song
Yong-Chol Oh
Jun-Yong Noh
Seung Wan Hong
Dong-Hyun Kim
Jin-Yang Kim
Hyeong-Hoon Kim
Dae-Joong Won
Won-Seong Lee
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Citations (10)
1