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Woun-Suck Yang
Woun-Suck Yang
Electronic engineering
Dram
Gate oxide
Chemical vapor deposition
Design for manufacturability
2
Papers
11
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Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
2001
SDM | SIAM International Conference on Data Mining
Jin-Yang Kim
Yong-chul Oh
Donghyun Kim
Kyu-Taek Hyun
Hyoung-Woen Seo
Dae-Joong Won
Moon-Mo Jeong
Yun-Jae Lee
Yoon-Jae Man
Sang-Hyun Lee
Ho-Won Sun
Se-Myeong Jang
Chang-Huhn Lee
Hyun Chang Kim
Chang-Kyu Kim
Makoto Yoshida
Woun-Suck Yang
In-Ho Nam
Gyo-Yong Jin
Won-Seong Lee
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Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology
2000
IEDM | International Electron Devices Meeting
H.S. Jeong
Woun-Suck Yang
Yoo-Sang Hwang
C.H. Cho
Su Jin Park
Suseob Ahn
Yoon-Soo Chun
S.H. Shin
Shi Hun Song
J.Y. Lee
Sungho Jang
C.H. Lee
J.H. Jeong
Myoung-kwan Cho
J.K. Lee
Kinam Kim
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Citations (11)
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