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J.H. Jeong
J.H. Jeong
Samsung
Electronic engineering
Materials science
Static random-access memory
sram cell
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6
Papers
33
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Ring Contact Electrode Process for High Density Phase Change Random Access Memory
2007
Japanese Journal of Applied Physics
Kyung-Chang Ryoo
Yoon-Jong Song
Jae-Min Shin
Sang Su Park
Dong-won Lim
Jae Hyun Kim
Woon-Ik Park
Ku-Ri Sim
J.H. Jeong
Dae-Hwan Kang
Jun-Hyuck Kong
Changwook Jeong
Jae-Hee Oh
Jae-Hyun Park
J.H. Kim
Yong-Tae Oh
Ji-Sun Kim
Seong-Ho Eun
Kwang-Woo Lee
Seong-Pil Koh
Yung Fai
Gwan-Hyob Koh
Gi-Tae Jeong
Hong Sik Jeong
Kinam Kim
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Citations (10)
Novel 3-dimensional 46F/sup 2/ SRAM technology with 0.294um/sup 2/ S/sup 3/ (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)
2004
ESSCIRC | European Solid-State Circuits Conference
Jae-Hoon Jang
Sung-Gon Jung
Y. H. Kang
Wooyoung Cho
J.H. Moon
Chadong Yeo
Kun-Ho Kwak
Byeong-In Choi
B.J. Hwang
W.R. Jung
Si-Hong Kim
J.H. Kim
J.H. Na
Hyun-Seok Lim
J.H. Jeong
Kinam Kim
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Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology
2000
IEDM | International Electron Devices Meeting
H.S. Jeong
Woun-Suck Yang
Yoo-Sang Hwang
C.H. Cho
Su Jin Park
Suseob Ahn
Yoon-Soo Chun
S.H. Shin
Shi Hun Song
J.Y. Lee
Sungho Jang
C.H. Lee
J.H. Jeong
Myoung-kwan Cho
J.K. Lee
Kinam Kim
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Citations (11)
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