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Yutaka Fukui
Yutaka Fukui
Mitsubishi Electric
Composite material
Materials science
MOSFET
trench gate
Oxide
5
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65
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Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation
2020
Materials Science Forum
Yutaka Fukui
Katsutoshi Sugawara
Rina Tanaka
Hidenori Koketsu
Hideyuki Hatta
Yusuke Miyata
Hiroyoshi Suzuki
Kensuke Taguchi
Yasuhiro Kagawa
Shingo Tomohisa
Naruhisa Miura
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Citations (1)
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
2020
Materials Science Forum
Rina Tanaka
Katsutoshi Sugawara
Yutaka Fukui
Hideyuki Hatta
Hidenori Koketsu
Hiroyoshi Suzuki
Yusuke Miyata
Kensuke Taguchi
Yasuhiro Kagawa
Shingo Tomohisa
Naruhisa Miura
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Citations (1)
Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer
2018
Materials Science Forum
Yutaka Fukui
Katsutoshi Sugawara
Kohei Adachi
Hideyuki Hatta
Kazuya Konishi
Koji Sadamatsu
Nobuo Fujiwara
Shingo Tomohisa
Satoshi Yamakawa
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Citations (2)
Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
2015
Materials Science Forum
Yasuhiro Kagawa
Rina Tanaka
Nobuo Fujiwara
Katsutoshi Sugawara
Yutaka Fukui
Naruhisa Miura
Masayuki Imaizumi
Shuhei Nakata
Satoshi Yamakawa
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Citations (6)
4H-SiC Trench MOSFET with Bottom Oxide Protection
2014
Materials Science Forum
Yasuhiro Kagawa
Nobuo Fujiwara
Katsutoshi Sugawara
Rina Tanaka
Yutaka Fukui
Yasuki Yamamoto
Naruhisa Miura
Masayuki Imaizumi
Shuhei Nakata
Satoshi Yamakawa
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Citations (55)
1