Old Web
English
Sign In
Acemap
>
authorDetail
>
Kensuke Taguchi
Kensuke Taguchi
Mitsubishi Electric
MOSFET
Materials science
Electrical engineering
Composite material
trench gate
4
Papers
14
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation
2020
Materials Science Forum
Yutaka Fukui
Katsutoshi Sugawara
Rina Tanaka
Hidenori Koketsu
Hideyuki Hatta
Yusuke Miyata
Hiroyoshi Suzuki
Kensuke Taguchi
Yasuhiro Kagawa
Shingo Tomohisa
Naruhisa Miura
Show All
Source
Cite
Save
Citations (1)
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
2020
Materials Science Forum
Rina Tanaka
Katsutoshi Sugawara
Yutaka Fukui
Hideyuki Hatta
Hidenori Koketsu
Hiroyoshi Suzuki
Yusuke Miyata
Kensuke Taguchi
Yasuhiro Kagawa
Shingo Tomohisa
Naruhisa Miura
Show All
Source
Cite
Save
Citations (1)
Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS?
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Kazuhiko Hasegawa
Kensuke Taguchi
Yasuhiro Kagawa
Eisuke Suekawa
Naoto Kaguchi
Yasuo Ata
Hideki Haruguchi
Yu Nakashima
Tadaharu Minato
Show All
Source
Cite
Save
Citations (1)
Analysis of a drain-voltage oscillation of MOSFET under high dV/dt UIS condition
2012
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Shinya Soneda
Atsushi Narazaki
Tetsuo Takahashi
Kazutoyo Takano
Shigenori Kido
Yusuke Fukada
Kensuke Taguchi
Tomohide Terashima
Show All
Source
Cite
Save
Citations (11)
1