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Hokyung Park
Hokyung Park
SK Hynix
Materials science
Electronic engineering
Optoelectronics
Analytical chemistry
Capacitor
4
Papers
10
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0
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Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy
2021
IEEE Journal of the Electron Devices Society
Tae Jin Yoo
Hyeon Jun Hwang
Soo Cheol Kang
Sunwoo Heo
Ho-In Lee
Young Gon Lee
Hokyung Park
Byoung Hun Lee
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A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements
2019
IEEE Transactions on Electron Devices
Andrea Padovani
Ben Kaczer
Milan Pešić
Attilio Belmonte
M. Popovici
Laura Nyns
Dimitri Linten
Valeri Afanas'ev
Ilya Shlyakhov
Younggon Lee
Hokyung Park
Luca Larcher
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Citations (7)
Time Domain Reflectometry Analysis of the Dispersion of Metal–Insulator–Metal Capacitance
2017
IEEE Electron Device Letters
Jinwoo Noh
Seung Mo Kim
Sunwoo Heo
Soo Cheol Kang
Yonghun Kim
Younggon Lee
Hokyung Park
Seokkiu Lee
Byoung Hun Lee
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Citations (3)
Understanding endurance degradation in Flash memory through transconductance measurement
2009
Sarves Verma
G. Bersuker
D. C. Gilmer
Andrea Padovani
Hokyung Park
Aneesh Nainani
J. Huang
Krishna Parat
P. D. Kirsch
Luca Larcher
H.-H. Tseng
K. C. Saraswat R. Jammy
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