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Uesugi Tsutomu
Uesugi Tsutomu
Materials science
Inductively coupled plasma
Analytical chemistry
p–n diode
Chemistry
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Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
2015
Sawada Naoki
Narita Tetsuo
Kachi Tetsu
Uesugi Tsutomu
Horita Masahiro
Suda Jun
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Evaluation of GaN substrates for vertical GaN power device applications
2012
IEICE technical report. Component parts and materials
Kachi Tetsu
Uesugi Tsutomu
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Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
2010
Uesugi Tsutomu
Kachi Tetsu
Hashizume Tamotsu
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Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
2010
IEICE technical report. Speech
Kikuta Daigo
Narita Tetsuo
Takahashi Naoko
Kataoka Keita
Kimoto Yasuji
Uesugi Tsutomu
Kachi Tetsu
Sugimoto Masahiro
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