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Eugene O. Sullivan
Eugene O. Sullivan
Samsung
Magnetoresistive random-access memory
Voltage
Tunnel magnetoresistance
Nuclear magnetic resonance
Spin-transfer torque
2
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100
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Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
2016
IEEE Magnetics Letters
Janusz J. Nowak
R. P. Robertazzi
Jonathan Z. Sun
Guohan Hu
Jeong Heon Park
Jung-Hyuk Lee
Anthony J. Annunziata
Gen P. Lauer
Raman Kothandaraman
Eugene O. Sullivan
Philip Louis Trouilloud
Young-Hyun Kim
Daniel C. Worledge
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Citations (99)
Voltage and Size Dependence on Write-Error-Rates in STT MRAM down to 11 nm Junction Size
2016
J. Nowak
R. P. Robertazzi
J. Z. Sun
Guohan Hu
Jeong Park
Jung Lee
Anthony J. Annunziata
Gen P. Lauer
Chandrasekharan Kothandaraman
Eugene O. Sullivan
Philip Louis Trouilloud
Young-Hyun Kim
Daniel C. Worledge
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Citations (1)
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