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Matthew W. Stoker
Matthew W. Stoker
Materials science
Epitaxy
Metallurgy
Engineering physics
process development
3
Papers
5
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Characterization of strain and crystallinity in patterned embedded Silicon Germanium structures
2011
The Japan Society of Applied Physics
Shogo Mochizuki
Anita Madan
A. Pofelski
Anthony G. Domenicucci
Philip L. Flaitz
Junjun Li
Yun-Yu Wang
Teresa Pinto
C. W. Lai
Judson R. Holt
Eric C. Harley
Matthew W. Stoker
Alexander Reznicek
Dominic J. Schepis
Vamsi Paruchuri
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(Invited) Epitaxial Growth of Si:C Alloys: Process Development and Challenges
2010
Abhishek Dube
Ashima B. Chakravarti
R. Takalkar
Junjun Li
F Yang
Anita Madan
Zhengmao Zhu
Rainer Loesing
R. Murphy
T. Adam
L. Black
Judson R. Holt
Eric C. Harley
Matthew W. Stoker
Dominic J. Schepis
Xiaolin Chen
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Citations (2)
SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology
2008
Judson R. Holt
Eric C. Harley
Thomas N. Adam
Shwu-Jen Jeng
Keith H. Tabakman
Rohit Pal
Hasan M. Nayfeh
Linda Black
Jeremy J. Kempisty
Matthew W. Stoker
Abhishek Dube
Dominic J. Schepis
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Citations (3)
1