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M. Mano
M. Mano
Sony Broadcast & Professional Research Laboratories
Electrical engineering
Electronic engineering
Photolithography
Static random-access memory
Proximity effect (audio)
2
Papers
4
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A 5-/spl mu/m/sup 2/ full-CMOS cell for high-speed SRAMs utilizing a optical-proximity-effect correction (OPC) technology
1996
VLSIT | Symposium on VLSI Technology
M. Ueshima
M. Mano
Y. Yoneda
T. Ichikawa
K. Tsudaka
H Takahashi
M. Yabuta
M. Motoyoshi
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Center wordline cell: A new symmetric layout cell for 64 Mb SRAM
1993
IEDM | International Electron Devices Meeting
Ihachi Naiki
M. Takizawa
M. Mano
Tadayuki Kimura
Tsutomu Ichikawa
Masanori Tsukamoto
Shigeru Fujita
T Nagayama
Masayoshi Sasaki
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