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Daniel Koehler
Daniel Koehler
Qimonda
Physics
Transistor
Electronic engineering
Dram
Optoelectronics
2
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40
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6F 2 buried wordline DRAM cell for 40nm and beyond
2008
IEDM | International Electron Devices Meeting
Till Schloesser
Frank Jakubowski
J. v. Kluge
Andrew Graham
Stefan Slesazeck
Martin Popp
Peter Baars
Klaus Muemmler
Peter Moll
K. Wilson
Axel Buerke
Daniel Koehler
J. Radecker
E. Erben
U. Zimmermann
T. Vorrath
B. Fischer
G. Aichmayr
R. Agaiby
W. Pamler
Thomas Schuster
W. Bergner
Wolfgang Mueller
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Citations (36)
Highly scalable sub-50nm vertical double gate trench DRAM cell
2004
IEDM | International Electron Devices Meeting
Till Schloesser
Dirk Manger
Rolf Weis
Stefan Slesazeck
F. Lau
Stefan Tegen
Michael Sesterhenn
M. Muemmler
Joachim Nuetzel
D. Temmler
B Kowalski
U. Scheler
M. Stavrev
Daniel Koehler
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Citations (4)
1