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S. Jeong
S. Jeong
Samsung
Electronic engineering
Electrical engineering
Engineering
Magnetoresistive random-access memory
Nuclear magnetic resonance
4
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77
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Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell
2014
VLSIT | Symposium on VLSI Technology
Ju Hyun Kim
Woo Chang Lim
Ung-hwan Pi
Jung-Hyuk Lee
Won-Jin Kim
Jung-hyeon Kim
Keunwoo Kim
Yun Kwon Park
Seongyong Park
M. A. Kang
Y. H. Kim
W. J. Kim
S. Y. Kim
J. H. Park
Shin-Ae Lee
Y. J. Lee
Jae-Man Yoon
Se Chung Oh
Soo-Yeong Park
S. Jeong
Seo-Woo Nam
Hyuk Kang
Eunseung Jung
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Citations (21)
Enhancement of switching margin by utilizing superior pinned layer stability for sub-20nm perpendicular STT-MRAM
2013
VLSIT | Symposium on VLSI Technology
Woo Chang Lim
Y. J. Lee
Jung-Hyuk Lee
Won-Jin Kim
Jung-hyeon Kim
Keunwoo Kim
Keon-Soo Kim
Yun Kwon Park
Hyun-Chul Shin
Seongyong Park
Jae-Hun Jeong
M. A. Kang
Y. H. Kim
W. J. Kim
S. Y. Kim
Y. C. Cho
Han-Byung Park
H. S. Ahn
J. H. Park
Se Chung Oh
Soo-Yeong Park
S. Jeong
Seo-Woo Nam
Hyuk Kang
Eunseung Jung
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Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy
2012
VLSIT | Symposium on VLSI Technology
Jeong Heon Park
Y.–T. Kim
Woo Chang Lim
J.H. Kim
Sang-Hwan Park
Won-Jin Kim
Keunwoo Kim
Jae-Hun Jeong
Keon-Soo Kim
Hyun Jae Kim
Y. J. Lee
Se Chung Oh
J. E. Lee
Sang Yong Park
S. Watts
Dmytro Apalkov
Vladimir Nikitin
Mohamad Towfik Krounbi
S. Jeong
S. Choi
Hyuk Kang
Chilhee Chung
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Citations (44)
Mobile Situation-Aware Task Recommendation Application
2008
NGMAST | Next Generation Mobile Applications, Services and Technologies
Doreen Cheng
Henry Song
Hyuk Cho
S. Jeong
Swaroop Kalasapur
A. Messer
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Citations (12)
1