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M. A. Kang
M. A. Kang
Samsung
Electrical engineering
Engineering
Electronic engineering
Magnetoresistive random-access memory
Nuclear magnetic resonance
2
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21
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Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell
2014
VLSIT | Symposium on VLSI Technology
Ju Hyun Kim
Woo Chang Lim
Ung-hwan Pi
Jung-Hyuk Lee
Won-Jin Kim
Jung-hyeon Kim
Keunwoo Kim
Yun Kwon Park
Seongyong Park
M. A. Kang
Y. H. Kim
W. J. Kim
S. Y. Kim
J. H. Park
Shin-Ae Lee
Y. J. Lee
Jae-Man Yoon
Se Chung Oh
Soo-Yeong Park
S. Jeong
Seo-Woo Nam
Hyuk Kang
Eunseung Jung
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Enhancement of switching margin by utilizing superior pinned layer stability for sub-20nm perpendicular STT-MRAM
2013
VLSIT | Symposium on VLSI Technology
Woo Chang Lim
Y. J. Lee
Jung-Hyuk Lee
Won-Jin Kim
Jung-hyeon Kim
Keunwoo Kim
Keon-Soo Kim
Yun Kwon Park
Hyun-Chul Shin
Seongyong Park
Jae-Hun Jeong
M. A. Kang
Y. H. Kim
W. J. Kim
S. Y. Kim
Y. C. Cho
Han-Byung Park
H. S. Ahn
J. H. Park
Se Chung Oh
Soo-Yeong Park
S. Jeong
Seo-Woo Nam
Hyuk Kang
Eunseung Jung
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