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Qing He
Qing He
Samsung
Physics
Magnetoresistive random-access memory
Spin-transfer torque
random access memory
Torque
2
Papers
29
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Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
2019
IEDM | International Electron Devices Meeting
Guohan Hu
Doo-gon Kim
Ju-youn Kim
C. Kothandaraman
Gen P. Lauer
Hun-kyu Lee
N. Marchack
M. Reuter
R. P. Robertazzi
Jonathan Z. Sun
Thitima Suwannasiri
Janusz J. Nowak
Philip L. Trouilloud
S. Woo
Daniel C. Worledge
M. G. Gottwald
S. L. Brown
B. Doris
C. P. D'Emic
P. Hashemi
D. Houssameddine
Qing He
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Citations (20)
Reliable 5 ns writing of spin-transfer torque MRAM
2019
IEEE Magnetics Letters
Guohan Hu
Janusz J. Nowak
Matthias G. Gottwald
Jonathan Z. Sun
Dimitri Houssameddine
Jung-Hoon Bak
Stephen L. Brown
Pouya Hashemi
Qing He
Juhyun Kim
Chandrasekharan Kothandaraman
Gen P. Lauer
Hyun-Koo Lee
Thitima Suwannasiri
Philip L. Trouilloud
Daniel C. Worledge
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Citations (9)
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