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M. Reuter
M. Reuter
Samsung
Physics
Electronic engineering
Magnetoresistive random-access memory
Compatibility (mechanics)
Tunnel magnetoresistance
2
Papers
31
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Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
2019
IEDM | International Electron Devices Meeting
Guohan Hu
Doo-gon Kim
Ju-youn Kim
C. Kothandaraman
Gen P. Lauer
Hun-kyu Lee
N. Marchack
M. Reuter
R. P. Robertazzi
Jonathan Z. Sun
Thitima Suwannasiri
Janusz J. Nowak
Philip L. Trouilloud
S. Woo
Daniel C. Worledge
M. G. Gottwald
S. L. Brown
B. Doris
C. P. D'Emic
P. Hashemi
D. Houssameddine
Qing He
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Citations (20)
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
2017
IEDM | International Electron Devices Meeting
Guohan Hu
M. G. Gottwald
Q. He
J. H. Park
Gen P. Lauer
Janusz J. Nowak
S. L. Brown
B. Doris
D. Edelstein
E. R. Evarts
P. Hashemi
B. Khan
Y. H. Kim
C. Kothandaraman
N. Marchack
E. J. OSullivan
M. Reuter
R. P. Robertazzi
J. Z. Sun
T. Suwannasiri
Philip Louis Trouilloud
Y. Zhu
Daniel C. Worledge
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Citations (11)
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