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D.H. Zadeh
D.H. Zadeh
Tokyo Institute of Technology
Electronic engineering
Materials science
Optoelectronics
Capacitor
Metal
4
Papers
18
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(Invited) Engineering high-k/InGaAs Interface for Extremely Scaled Gate Stacks
2015
D.H. Zadeh
H. Oomine
K. Kakushima
H. Iwai
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La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
2013
Solid-state Electronics
D.H. Zadeh
H. Oomine
Yuya Suzuki
Kuniyuki Kakushima
Parhat Ahmet
H. Nohira
Y. Kataoka
A. Nishiyama
Nobuyuki Sugii
Kazuo Tsutsui
K. Natori
T. Hattori
Hiroshi Iwai
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Citations (17)
Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density
2013
The Japan Society of Applied Physics
D.H. Zadeh
H. Oomine
Kuniyuki Kakushima
Yoshinori Kataoka
A. Nishiyama
Nobuyuki Sugii
Hitoshi Wakabayashi
Kazuo Tsutsui
K. Natori
Hiroshi Iwai
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Citations (1)
Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection
2012
The Japan Society of Applied Physics
D.H. Zadeh
Yuya Suzuki
H. Omine
Kuniyuki Kakushima
Parhat Ahmet
Yoshinori Kataoka
A. Nishiyama
Nobuyuki Sugii
Kazuo Tsutsui
K. Natori
T. Hattori
Hiroshi Iwai
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