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Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection
Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection
2012
D.H. Zadeh
Yuya Suzuki
H. Omine
Kuniyuki Kakushima
Parhat Ahmet
Yoshinori Kataoka
A. Nishiyama
Nobuyuki Sugii
Kazuo Tsutsui
K. Natori
T. Hattori
Hiroshi Iwai
Keywords:
Capacitor
Nanotechnology
Electronic engineering
Metal
Materials science
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