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D. Lehninger
D. Lehninger
Fraunhofer Society
Ferroelectricity
Optoelectronics
Substrate (chemistry)
Materials science
Polarization (waves)
4
Papers
12
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A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays
2021
Advanced electronic materials
D. Lehninger
Martin Ellinger
T. Ali
Songrui Li
Konstantin Mertens
Maximilian Lederer
Ricardo Olivio
Thomas Kämpfe
Norbert Hanisch
K. Biedermann
Matthias Rudolph
Varvara Brackmann
Shawn Sanctis
Michael P. M. Jank
Konrad Seidel
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Citations (3)
A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO 2 Memory FeFET: A Temperature-Modulated Operation
2020
IEEE Transactions on Electron Devices
T. Ali
K. Kühnel
Malte Czernohorsky
C. Mart
Matthias Rudolph
B. Pätzold
M. Lederer
R. Olivo
D. Lehninger
F. Muller
R. Hoffmann
Joachim Metzger
Robert Binder
P. Steinke
Thomas Kämpfe
Johannes Müller
K. Seidel
Lukas M. Eng
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Citations (4)
Effect of Substrate Implant Tuning on the Performance of MFIS Silicon Doped Hafnium Oxide (HSO) FeFET Memory
2020
IMW | International Memory Workshop
T. Ali
K. Kühnel
K. Mertens
Malte Czernohorsky
Matthias Rudolph
P. Duhan
D. Lehninger
R. Hoffmann
P. Steinke
Johannes Müller
J. Van Houdt
K. Seidel
Lukas M. Eng
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Citations (1)
Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide
2020
IEDM | International Electron Devices Meeting
C. Mart
S. Abdulazhanov
Malte Czernohorsky
Thomas Kämpfe
D. Lehninger
K. Falidas
Sophia Eßlinger
K. Kühnel
Sebastian Oehler
Matthias Rudolph
Maciej Wiatr
Sabine Kolodinski
R. Seidel
Wenke Weinreich
Lukas M. Eng
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Citations (4)
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